p-channel power mosfet semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8678 issue 2 page 1 of 3 SML6609ASMD05 electrically isolated and hermetically sealed surfac e mount package ultra low on state resistance fast switching low gate charge screening options available absolute maximum ratings (t case = 25c unless otherwise stated) v ds drain ? source voltage -30v v gs gate ? source voltage 20v i d continuous drain current @ t case = 25c -6.3a i dm pulsed drain current 1 -40a p d total power dissipation @ t case = 25c 20w linear de-rating factor @ t case 25c 0.45w/c t j , t stg operating and storage temperature range -55c to +1 50c thermal characteristics symbol parameters max units r jc thermal resistance, junction to case 1.8 c/w r jpcb thermal resistance, junction to pcb 6.25 c/w notes: 1) pulse width 300 s; duty cycle 2%
p-channel power mosfet SML6609ASMD05 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8678 issue 2 page 2 of 3 electrical characteristics (t case = 25c unless otherwise stated) symbol parameters test conditions min typ max units bv dss drain-source breakdown voltage v gs = 0 i d = -250a -30 v j t vdss b ? ? temperature coefficient of breakdown voltage reference to 25c i d = -250a -0.022 v/c v gs = -10v i d = -7a 0.04 t j = 125c 0.54 r ds(on) 1 static drain-source on-state resistance v gs = -7.5v i d = -5.5a 0.06 v gs(th) gate threshold voltage v ds = v gs i d = -250a -2.5 -4.5 v j t th gs v ? ? )( temperature coefficient of gate threshold voltage reference to 25c i d = -250 a -0.004 v/c g fs 1 forward transconductance v ds = -10v i d = -7a 14.5 s( ? ) i dss drain-source leakage current v gs = 0 v ds = -24v -3.0 a i gss forward gate-source leakage v gs = -20v -100 i gss reverse gate-source leakage v gs = 20v 100 na i d(on) on-state drain current v gs = -10v v ds = -5v -20 a dynamic characteristics c iss input capacitance 1975 c oss output capacitance 315 c rss reverse transfer capacitance v gs = 0 v ds = -25v f = 1.0mhz 160 pf q g total gate charge 46 q gs gate-source charge 19 q gd gate-drain charge v gs = -10v i d = -7.2a v ds = -15v 11 nc t d(on) turn-on delay time 20 t r rise time 28 t d(off) turn-off delay time 39 t f fall time v dd = -15v i d = -1.0a r g = 6 v gs = -10v 27 ns source ? drain diode characteristics i s continuous source current -2.1 a v sd 1 diode forward voltage i s = -2.1a v gs = 0 -1.2 v
p-channel power mosfet SML6609ASMD05 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8678 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) 2 1 3 2.41 (0.095) (0.030) min. 3.05 (0.120) 5.72 (.225) 0.127 (0.005) (0.296) 10.16 (0.400) 0.76 (0.030) min. 3.175 (0.125) max. 0.50 (0.020) max. 7.54 0.76 2.41 (0.095) 0.127 (0.005) (0.286) 7.26 16 plcs 0.50(0.020) 0.127 (0.005) smd05 (to - 276aa) (underside view) pad 1 - source pad 2 ? drain pad 3 - gate
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